Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching
نویسندگان
چکیده
منابع مشابه
Very Fast Metal–Semiconductor–Metal Ultraviolet Photodiodes on GaN with Submicron Finger Width
46 LLE Review, Volume 93 Metal–semiconductor–metal (MSM) photodiodes made on GaN are attractive candidates for fast ultraviolet (UV) signals due to the simplicity of fabrication and the visible blind feature (no response for λ > 365 nm). The temporal response of a MSM photodetector fabricated on GaN has been examined both theoretically1 and experimentally.2–4 While the theoretical modeling for ...
متن کاملMetal-semiconductor-metal ultraviolet photodetector based on GaN
A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...
متن کاملHigh-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
photodetectors Ayman Karar, Narottam Das, Chee Leong Tan, Kamal Alameh, Yong Tak Lee, and Fouad Karouta Electron Science Research Institute, Edith Cowan University, Joondalup, WA, Australia School of Photonics Science, Gwangju Institute of Science and Technology (GIST), Gwangju, South Korea Department of Information and Communications, GIST, Gwangju, South Korea Department of Nanobio Materials ...
متن کاملNanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors
In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occ...
متن کاملQuantum dot-doped porous silicon metal–semiconductor metal photodetector
In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2012
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.121.71